PART |
Description |
Maker |
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
IXBH20N140 IXBH20N160 |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor 20 A, 1400 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp. IXYS Corporation
|
UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET From old datasheet system MOS Field Effect Transistor P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC] NEC Corp.
|
UPA602T PA602T G11249EJ1V0DS00 UPA602T-A |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FET 6-PIN 2 CIRCUITS MOS Field Effect Transistor From old datasheet system
|
NEC Corp.
|
TPCS8205 TPC8205 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
|
TOSHIBA[Toshiba Semiconductor]
|
IXBH6N170 |
High Voltage, High Gain BIMOSFETMonolithic Bipolar MOS Transistor 12 A, 1700 V, N-CHANNEL IGBT, TO-247
|
IXYS, Corp.
|
TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
2SK3577 2SK3577-T1B 2SK3577-T2B |
N Channel enhancement MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
UPA1872 UPA1872GR-9JG UPA1872GR-9JG-E1 UPA1872GR-9 |
N-channel enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
|
UPA678TB |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P-Channel enhancement MOS FET for load sw
|
NEC Corp.
|